| PART |
Description |
Maker |
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
| SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
